| PART |
Description |
Maker |
| ZXMN10A07Z ZXMN10A07ZTA |
TV 6C 6#20 SKT PLUG RECP 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
100V N-CHANNEL ENHANCEMENT MODE MOSFET
|
Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
|
| ZXMN10A07Z_04 ZXMN10A07Z ZXMN10A07ZTA ZXMN10A07Z04 |
1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
100V N-CHANNEL ENHANCEMENT MODE MOSFET
|
ZETEX PLC
ZETEX[Zetex Semiconductors]
Diodes Incorporated
|
| T9G00410 T9G00412 T9G01010 T9G01012 T9G00110 T9G00 |
Phase Control SCR (1000-1200 Amperes Avg 100-2200 Volts) 第一阶段控制晶闸管（1000-1200安培平均100-2200伏特
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| 0826-1Y4T-23 0826-1B4T-23 0826-1D4T-23 0826-1C4T-2 |
4port.Y/Y LEDs.RJ45 10/100/1000 Gigabit Ethernet
4port.GO/GO LEDs.RJ45 10/100/1000 Gigabit Ethernet
4port.G/Y LEDs.RJ45 10/100/1000 Gigabit Ethernet
4port.GY/GY LEDs.RJ45 10/100/1000 Gigabit Ethernet
4port.Y/GO LEDs.RJ45 10/100/1000 Gigabit Ethernet
4port.Y/G LEDs.RJ45 10/100/1000 Gigabit Ethernet
4port.G/GO LEDs.RJ45 10/100/1000 Gigabit Ethernet
4port.GY/G LEDs.RJ45 10/100/1000 Gigabit Ethernet
4port.G/GY LEDs.RJ45 10/100/1000 Gigabit Ethernet
4port.G/G LEDs.RJ45 10/100/1000 Gigabit Ethernet 4port.G /克LEDs.RJ45 10/100/1000千兆以太
|
TURCK, Inc.
|
| APT10078BFLL_06 APT10078BFLL APT10078BFLL06 APT100 |
14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT10078SLL APT10078BLL APT10078BLL_04 APT10078BLL |
14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培，功率场效应晶体000伏特的RDS（on）\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| VSC7372 |
HawX-G16 - 16-Port 10/100/1000 Managed L2 Ethernet Switch
HAWX-G16⒙ - 16-PORT 10/100/1000 MANAGED L2 ETHERNET SWITCH
|
Vitesse Semiconductor Corporation
|
| MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
ON SEMICONDUCTOR
|
| FFM101 FFM102 FM107 FFM107 FFM104 FFM106 FFM105 FF |
1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC
SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC
|
Rectron Semiconductor
RECTRON LTD
|
| NS0068C |
10/100/1000 BASE-T LAN MAGNETICS
|
Bothhand USA, LP.
|
|
